Samsung Electronics today revealed that it began compiling the industry’s first 16-gigabit Graphics Double Data Rate 6 DRAM with 24 Gbps processing speeds. It is built on 10 nm EUV process technology and is expected to increase the performance of portable and console GPUs.
The new DRAM chip will offer universal compatibility so that it can have wide market adoption among graphics device manufacturers.
Engineers at Suwon, Samsung HQ, developed an innovative circuit design and a highly advanced insulation material called High-K Metal Gate or HKMG to minimize data leakage. This means that GDDR6 DRAM will provide 30% higher speeds than its predecessor.
Samsung’s new GDRR6 series will also offer some low-power options for extended battery life on laptops. It uses dynamic voltage switching technology that adapts to the performance requirements. The company will launch versions with 20 Gbps and 16 Gbps processing speeds running at 1.1V instead of the 1.35V industry standard.
Samsung GDDR6 DRAM
Daniel Lee, Executive VP of Memory Product Planning Team at Samsung, revealed that the reason for such high processing speeds is the “explosion” of data processing needs, driven by AI and metaverse. The company is currently testing the new platform, which means it is still being verified in real-world scenarios so that it can enter the market “in line with GPU platform launches”.
